Part Number Hot Search : 
LS133 KTA126 10150 X84C8V2W VRE127M XB15A709 MAX2605 IW873
Product Description
Full Text Search

MRF6S21140HSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S21140HSR3_1283632.PDF Datasheet

 
Part No. MRF6S21140HSR3 MRF6S21140HR3 MRF6S21140HR3_07 MRF6S21140HR307
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 451.04K  /  11 Page  

Maker

FREESCALE[Freescale Semiconductor, Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF6S21140HSR3
Maker: N/A
Pack: N/A
Stock: 70
Unit price for :
    50: $50.22
  100: $47.70
1000: $45.19

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MRF6S21140HSR3 MRF6S21140HR3 MRF6S21140HR3_07 MRF6S21140HR307 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF6S21140HSR3 MRF6S21140HR3 MRF6S21140HR3_07 MRF6S21140HR307 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF6S21140HSR3 ]

[ Price & Availability of MRF6S21140HSR3 by FindChips.com ]

 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
SSM3J01T Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
SSM3J02F 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
MTP2N80 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MAPL-000817-015CPC RF Power Field Effect Transistor
Tyco Electronics
MRF8P20160HR3 RF Power Field Effect Transistors
Motorola Semiconductor Products
MRF8S7120NR3 RF Power Field Effect Transistor
Motorola
MRF141 RF FIELD-EFFECT POWER TRANSISTOR
Advanced Semiconductor
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF1517NT108 RF Power Field Effect Transistor
Freescale Semiconductor, Inc
Freescale Semiconductor...
 
 Related keyword From Full Text Search System
MRF6S21140HSR3 rectifier MRF6S21140HSR3 filetype:pdf MRF6S21140HSR3 gain MRF6S21140HSR3 Integrate MRF6S21140HSR3 vdd
MRF6S21140HSR3 Dropout MRF6S21140HSR3 Terminal MRF6S21140HSR3 circuit diagram MRF6S21140HSR3 Register MRF6S21140HSR3 Stmicroelectronic
 

 

Price & Availability of MRF6S21140HSR3

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.92213106155396